EPSON温补晶体振荡器X1G0042110016频率精度补偿方法,音叉型石英晶体振荡器具有振荡频率随周围温度而变化的特性,为提高时钟精度则需进行精度补偿。表示的是爱普生所采用的通过数字式 TCXO温度补偿而进行的频率精度补偿方法。爱普生公司发布高质量TCXO温补晶体振荡器型号TG-5006CG,编码X1G0042110016,尺寸为2520mm,频率为19.2MHZ,产品具备低电压低相位高质量的特点,广泛应用无线应用,小型设备,航空电子,导航定位等领域。
该方法每隔一定周期将周围温度信息转换成数字,从内存中呼出该温度相应的补偿值,对振荡频率进行补偿。振荡频率补偿方 式可分为两大种类:电容调整方式和逻辑调整方式。爱普生实时时钟模块中主要使用电容调整方式。在下页中说明补偿方式。
Product Number | Model | Frequency | LxWxH | Output Wave | Supply Voltage | F.Tol@25°C | Ope Temperature |
X1G0042110001 | TG-5006CG | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.660 to 2.940 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110002 | TG-5006CG | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.300 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110003 | TG-5006CG | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.300 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110004 | TG-5006CG | 16.368000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.300 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110005 | TG-5006CG | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 1.900 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110006 | TG-5006CG | 16.367667 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.300 V | +/-1.0 ppm | -30 to +85 °C |
X1G0042110008 | TG-5006CG | 16.369000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.300 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110011 | TG-5006CG | 38.400000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.300 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110015 | TG-5006CG | 16.369000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.300 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110016 | TG-5006CG | 19.200000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.300 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110027 | TG-5006CG | 30.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.300 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110031 | TG-5006CG | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.465 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110033 | TG-5006CG | 49.999800 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.465 V | +/-2.0 ppm | -30 to +85 °C |
X1G0042110034 | TG-5006CG | 26.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 2.520 to 3.080 V | +/-2.0 ppm | -40 to +85 °C |
X1G0042110037 | TG-5006CG | 24.000000 MHz | 2.50 x 2.00 x 0.80 mm | Clipped sine wave | 1.700 to 3.465 V | +/-1.5 ppm | -30 to +85 °C |
X1G0044210003 | TG2016SAN | 26.000000 MHz | 2.00 x 1.60 x 0.73 mm | Clipped sine wave | 1.100 to 1.300 V | +/-1.5 ppm | -30 to +85 °C |
X1G0044210004 | TG2016SAN | 26.000000 MHz | 2.00 x 1.60 x 0.73 mm | Clipped sine wave | 1.100 to 1.300 V | +/-1.5 ppm | -30 to +85 °C |
X1G0044210005 | TG2016SAN | 38.400000 MHz | 2.00 x 1.60 x 0.73 mm | Clipped sine wave | 1.100 to 1.300 V | +/-2.0 ppm | -30 to +85 °C |
X1G0044210007 | TG2016SAN | 24.000000 MHz | 2.00 x 1.60 x 0.73 mm | Clipped sine wave | 1.100 to 1.400 V | +/-2.0 ppm | -30 to +85 °C |
X1G0044310086 | TG5032CAN | 10.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-2.0 ppm | 0 to +70 °C |
X1G0044310088 | TG5032CAN EPSON晶振 | 15.360000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-2.0 ppm | 0 to +70 °C |
X1G0044310093 | TG5032CAN | 25.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-2.0 ppm | 0 to +70 °C |
X1G0044310097 | TG5032CAN | 20.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-2.0 ppm | 0 to +70 °C |
X1G0044310101 | TG5032CAN | 19.200000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-2.0 ppm | -40 to +85 °C |
X1G0044310102 | TG5032CAN | 26.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-2.0 ppm | -40 to +85 °C |
X1G0044310103 | TG5032CAN | 30.720000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-2.0 ppm | -40 to +85 °C |
X1G0044310104 | TG5032CAN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-2.0 ppm | -40 to +85 °C |
X1G0044410086 | TG5032SAN | 10.000000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-2.0 ppm | 0 to +70 °C |
X1G0044410088 | TG5032SAN | 15.360000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-2.0 ppm | 0 to +70 °C |
X1G0044410093 | TG5032SAN | 25.000000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-2.0 ppm | 0 to +70 °C |
X1G0044410097 | TG5032SAN | 20.000000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-2.0 ppm | 0 to +70 °C |
X1G0044410101 | TG5032SAN | 19.200000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-2.0 ppm | -40 to +85 °C |
X1G0044410102 | TG5032SAN | 26.000000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-2.0 ppm | -40 to +85 °C |
X1G0044410103 | TG5032SAN | 30.720000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-2.0 ppm | -40 to +85 °C |
X1G0044410104 | TG5032SAN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-2.0 ppm | -40 to +85 °C |
X1G0045710085 | TG5032CBN | 24.576000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045710086 | TG5032CBN | 10.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045710088 | TG5032CBN | 15.360000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045710091 | TG5032CBN | 19.200000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045710092 | TG5032CBN | 26.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045710093 | TG5032CBN | 25.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045710094 | TG5032CBN | 40.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045710095 | TG5032CBN | 50.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-0.9 ppm | -40 to +85 °C |
X1G0045710096 | TG5032CBN | 30.720000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045710097 | TG5032CBN | 20.000000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045710098 | TG5032CBN | 19.440000 MHz | 5.00 x 3.20 x 1.45 mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045810085 | TG5032SBN | 24.576000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045810086 | TG5032SBN | 10.000000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045810088 | TG5032SBN | 15.360000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045810091 | TG5032CBN | 19.200000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045810092 | TG5032SBN | 26.000000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G0045810093 | TG5032SBN | 25.000000 MHz | 5.00 x 3.20 x 1.45 mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
电容调整方式指通过改变石英振荡频率进行补偿的方法。该方式利用振荡频率随石英晶体振荡器的振荡负载电容的增减而变化 的特点,补偿因周围温度而产生的频率变动。简易原理用图2表示。 图2左表示音叉型石英晶体振荡器的频率温度特性,图2右表示频率随负载电容而变化的电容调整特性。补偿的具体内容包括 根据周围温度①求出频率变量②,并推导出该频率变量②相应的负载电容变量③。将该温度相应的负载电容变量作为补偿值呼出 后,对振荡频率进行补偿。该方式直接对振荡频率进行补偿,因此可以把实时时钟模块的振荡输出补偿为高精度后作为低频的休 眠时钟使用。
<逻辑调整方式>
逻辑调整方式指不调整石英晶体振荡器的频率而起振,在分频电路的一部分增减脉冲进行补偿的方法。简易原理用图 4 表示。 补偿的具体内容包括根据周围温度①求出频率变量②,在分频电路中对该频率变量②相应的频率进行补偿后输出。如图3所示,通常由 32768 个脉冲生成“1 秒”的时间,若改为由 32767个脉冲生成“1 秒”信号,就可以缩短 1 秒的周期。EPSON温补晶体振荡器X1G0042110016频率精度补偿方法,
假如晶振以每秒一次的频度执行该补偿,其频率补偿量则相当于约 30.5×10-6。通过调整生成 1 秒的脉冲数以及变更补偿频度,就可 以在不更改振荡电路的条件下进行较大的补偿。而且,该方式使用逻辑电路进行调整,最终将正确输出转动时钟的 1 秒信号,因 而被广泛用于以 1 秒工作的手表等的时钟源。然而,输出到外部的时钟信号周期因温度补偿而急剧变化,因此将导致使用该时钟 的 CPU 不能以正确时间工作,使用这种补偿方式时周围的元器件将无法享受其恩惠。