SG-8018CE爱普生有源晶振X1G005591004300晶体振荡器SPXO工作原理
工作人员只要在晶体振子板极上施加交变电压,就会使晶片产生机械变形振动,此现象即所谓逆压电效应.爱普生晶振当外加电压频率等于晶体谐振器的固有频率时,就会发生压电谐振,从而导致机械变形的振幅突然增大.在晶体谐振器的等效电路中Co为晶片
SG-8018CE爱普生有源晶振,X1G005591004300晶体振荡器SPXO
石英晶体振荡器分非温度补偿式晶体振荡器、温度补偿晶体振荡器TCXO、电压控制晶体振荡器VCXO、恒温控制式晶体振荡器OCXO和数字化/μp补偿式晶体振荡器DCXO/MCXO等几种类型.其中,无温度补偿式晶体振荡器是最简单的一种,在日本晶振工业标准JIS中,称其为标准封装晶体振荡器SPXO.现以SPXO为例,简要介绍一下石英晶体振荡器的结构与工作原理.
爱普生有源晶振编码
型号
频率
长X宽X高
输出波
电源电压
工作温度
频差
最大值
X1G005591003500
SG-8018CE
14.745600MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591003600
SG-8018CE
14.745600MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591003700
SG-8018CE
12.288000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591003800
SG-8018CE
12.288000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591003900
SG-8018CE
33.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591004000
SG-8018CE
33.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591004100
SG-8018CE
30.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591004200
SG-8018CE
30.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591004300
SG-8018CE
26.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591004400
SG-8018CE
26.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591004500
SG-8018CE
24.576000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591004600
SG-8018CE
24.576000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591004700
SG-8018CE
100.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.9mA
X1G005591004800
SG-8018CE
100.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.9mA
X1G005591004900
SG-8018CE
4.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591005000
SG-8018CE
4.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591005100
SG-8018CE
66.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591005200
SG-8018CE
66.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤5.2mA
X1G005591005300
SG-8018CE
19.660800MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591005400
SG-8018CE
19.660800MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
X1G005591005500
SG-8018CE
125.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤6.7mA
X1G005591005600
SG-8018CE
125.000000MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤6.7mA
X1G005591005700
SG-8018CE
33.333300MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591005800
SG-8018CE
33.333300MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤4.4mA
X1G005591005900
SG-8018CE
11.289600MHz
3.20x2.50x1.20mm
CMOS
1.620to3.630V
-40to105°C
+/-50ppm
≤3.5mA
SG-8018CE爱普生有源晶振,X1G005591004300晶体振荡器SPXO
石英晶体有天然的和人造的,是重要的压电晶体材料.石英晶体本身并非振荡器,它只有助于有源激励和无源电抗网络方可产生振荡.SPXO主要是由品质因数Q很高的晶体谐振器即晶体振子与反馈式振荡电路组成的.石英晶体振子是振荡器中的重要元件,可编程晶体振荡器的频率基频或n次谐波频率及其温度特性在很大程度上取决于其切割取向.石英晶体谐振器的基本结构、金属壳封装及其等效电路.SG-8018CE爱普生有源晶振,X1G005591004300晶体振荡器SPXO
京瓷晶振,时钟振荡器,KC7050A-C1晶振,7050有源晶体
京瓷晶振,热敏晶振,CT2016DB晶振,CT2016DB38400C0FLHA2晶振
京瓷晶振,热敏晶振,CT1612DB晶振,CT1612DB38400C0FLHA1晶振
