SG-8018CE可编程晶体振荡器X1G005591018400具有高稳定性能,有源晶振

什么是石英可编程晶振?可编程晶振实为有源晶振，石英可编程（Q MEMS）具有高稳定、高精度等优越性能的石英材料[QUARTZ]和[MEMS]组合而成的造词，以石英为原料进行精微加工(光刻)并可以提供的小型化、高性能的晶体元器件被称为[Q MEMS]。
爱普生晶振SG-8018系列，是新一代石英可编程晶体振荡器，支持CMOS电平输出，有利于设备的综合设计。输出启用和待机模式由OE和ST引脚切换。当晶振输出频率为20MHz时，空载电流损失低至2.7Ma。在待机模式下，静态电流仅为0.3MUA，这使得更容易实现低功耗设计。SG-8018的输出频率在0.67MHz至170MHz之间。由于采用了锁相环（PLL），在没有温度补偿的情况下可以产生稳定的频率信号，其中频率容限仅为（-40~+105℃）。具有低成本、可定制频率、快速交付、高稳定性、宽温级、低功耗、规格丰富等特点，可以替换目前中国市场上大部分常规有源晶振（SPXO）
SG-8018CE可编程晶体振荡器X1G005591018400具有高稳定性能

产品编码	频率	贴片晶振	尺寸(长宽高)	输出波	电源电压	工作温度
X1G005591001100	25.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591001200	25.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591001300	20.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591001400	20.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591001500	50.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591001600	50.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591001700	48.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591001800	48.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591001900	24.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591002000	24.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591002100	40.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591002200	40.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591002300	16.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591002400	16.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591002500	12.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591002600	12.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591002700	10.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C

X1G005591017400	80.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591017500	5.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591017600	66.666667MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591017900	14.318000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591018000	7.500000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591018100	66.870000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591018200	42.949700MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591018300	54.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591018400	32.768000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591018500	18.063360MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591018600	8.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591018900	15.000000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591019000	51.200000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591019100	16.666600MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591019600	49.090900MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591019700	65.536000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C
X1G005591019800	26.660000MHz	SG-8018CE	3.20x2.50x1.20mm	CMOS	1.620 to 3.630 V	-40 to 105 °C